SIB404DK-T1-GE3
MOSFET N-CH 12V 9A PPAK SC75-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel Power MOSFET, part number SIB404DK-T1-GE3, from the TrenchFET® series. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). The SIB404DK-T1-GE3 offers a low on-resistance of 19mOhm maximum at 3A, 4.5V, driven by a gate-source voltage (Vgs) of 4.5V. It has a maximum gate charge (Qg) of 15 nC at 4.5V. The PowerPAK® SC-75-6 package facilitates efficient thermal management with a power dissipation of 2.5W (Ta) and 13W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-75-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | PowerPAK® SC-75-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
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