SIAA40DJ-T1-GE3
MOSFET N-CH 40V 30A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen IV SIAA40DJ-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 40V drain-source breakdown voltage and supports a continuous drain current of 30A at 25°C (Tc), with a maximum power dissipation of 19.2W (Tc). The Rds(on) is specified at a maximum of 12.5mOhm at 5A and 10V Vgs. Key parameters include a gate charge (Qg) of 12 nC at 4.5V and input capacitance (Ciss) of 1200 pF at 20V Vds. The SIAA40DJ-T1-GE3 utilizes the PowerPAK® SC-70-6 package for surface mounting, offering a compact footprint and efficient thermal management. It is suitable for use in automotive, industrial power, and consumer electronics sectors requiring robust power conversion. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 19.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 20 V |
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