SIA850DJ-T1-GE3
MOSFET N-CH 190V 950MA PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIA850DJ-T1-GE3 is an N-Channel MOSFET from the LITTLE FOOT® series. This component features a Drain-to-Source Voltage (Vdss) of 190 V and a continuous drain current (Id) of 950 mA at 25°C (Tc). The device is housed in a PowerPAK® SC-70-6 Dual package, facilitating surface mount installation. Key electrical characteristics include a maximum Rds(on) of 3.8 Ohms at 360 mA and 4.5 V gate-source voltage, with a typical gate charge (Qg) of 4.5 nC at 10 V. It incorporates an isolated Schottky diode and operates across a junction temperature range of -55°C to 150°C. Power dissipation is rated at 1.9 W (Ta) and 7 W (Tc). This MOSFET is utilized in power management applications, automotive systems, and industrial controls.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8Ohm @ 360mA, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.9W (Ta), 7W (Tc) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 190 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 100 V |