SIA814DJ-T1-GE3
MOSFET N-CH 30V 4.5A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® N-Channel Power MOSFET, part number SIA814DJ-T1-GE3, offers a 30V drain-source breakdown voltage. This device features a low on-resistance of 61mOhm maximum at 3.3A and 10V Vgs. The SIA814DJ-T1-GE3 is housed in a PowerPAK® SC-70-6 Dual package, suitable for surface mount applications. It supports a continuous drain current of 4.5A at 25°C (Tc) with a maximum power dissipation of 1.9W (Ta) and 6.5W (Tc). Key parameters include a gate charge of 11 nC maximum at 10V Vgs and an input capacitance of 340 pF maximum at 10V Vds. This component includes an integrated Schottky diode for improved performance. The SIA814DJ-T1-GE3 is utilized in applications such as power management and high-efficiency switching circuits.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 3.3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.9W (Ta), 6.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 10 V |