SIA811DJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SIA811DJ-T1-GE3. This device features a 20V drain-source voltage and a continuous drain current of 4.5A at 25°C (Tc). Designed for surface mounting, it is housed in a PowerPAK® SC-70-6 Dual package. The SIA811DJ-T1-GE3 offers a maximum on-resistance of 94mOhm at 2.8A and 4.5V Vgs. Key electrical characteristics include a gate charge of 13 nC at 8V Vgs and input capacitance of 355 pF. The MOSFET incorporates an isolated Schottky diode and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 1.9W (Ta) and 6.5W (Tc). This component is utilized in applications requiring efficient power switching.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 2.8A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.9W (Ta), 6.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 10 V |
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