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SIA811DJ-T1-E3

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SIA811DJ-T1-E3

MOSFET P-CH 20V 4.5A PPAK SC70-6

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix LITTLE FOOT® SIA811DJ-T1-E3 is a P-Channel MOSFET designed for power management applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current capability of 4.5A at 25°C (Tc). The SIA811DJ-T1-E3 offers a maximum on-resistance (Rds On) of 94mOhm at 2.8A and 4.5V Vgs. It includes an integrated Schottky diode and can be driven with gate-source voltages ranging from 1.8V to 4.5V. The component is housed in a PowerPAK® SC-70-6 Dual surface mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial power control systems.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SC-70-6 Dual
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Rds On (Max) @ Id, Vgs94mOhm @ 2.8A, 4.5V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePowerPAK® SC-70-6 Dual
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds355 pF @ 10 V

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