SIA468DJ-T1-GE3
MOSFET N-CH 30V 37.8A PPAK SC70Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® Gen IV N-Channel Power MOSFET, part number SIA468DJ-T1-GE3, offers a 30V drain-source voltage and a continuous drain current of 37.8A at 25°C (Tc). This surface mount device features a low on-resistance of 8.4mOhm at 11A and 10V Vgs. With a gate charge of 16nC at 4.5V and input capacitance of 1290pF at 15V, it is designed for efficient switching applications. The SIA468DJ-T1-GE3 is packaged in a PowerPAK® SC-70-6, supporting a maximum power dissipation of 19W (Tc). Its operating temperature range is -55°C to 150°C. This component is suitable for automotive and industrial power management systems.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 19W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 15 V |
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