SIA467EDJ-T1-GE3
MOSFET P-CH 12V 31A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SIA467EDJ-T1-GE3. This single MOSFET features a 12V drain-to-source voltage and a continuous drain current of 31A at 25°C (Tc). Optimized for high-efficiency switching applications, it offers a low on-resistance of 13mOhm maximum at 5A, 4.5V. The device is housed in a compact PowerPAK® SC-70-6 package, suitable for surface mounting. Key electrical characteristics include 2520pF maximum input capacitance (Ciss) at 6V and 72nC maximum gate charge (Qg) at 8V. Power dissipation is rated at 3.5W (Ta) and 19W (Tc). This component is commonly utilized in power management solutions across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 6 V |
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