SIA462DJ-T4-GE3
MOSFET N-CH 30V 12A/12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIA462DJ-T4-GE3 is an N-Channel TrenchFET® MOSFET designed for efficient power management. This component features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current of 12A at 25°C ambient (Ta) and 12A at 25°C case (Tc). With a maximum power dissipation of 3.5W (Ta) and 19W (Tc), it is suitable for applications requiring robust thermal performance. The on-resistance (Rds On) is specified as a maximum of 18mOhm at 9A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 17 nC (max) at 10V Vgs and an input capacitance (Ciss) of 570 pF (max) at 15V Vds. It supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. The SIA462DJ-T4-GE3 is housed in a PowerPAK® SC-70-6 package, facilitating surface mounting. This MOSFET is commonly utilized in power supplies, battery management, and industrial automation applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 15 V |
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