SIA453EDJ-T1-GE3
MOSFET P-CH 30V 24A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, SIA453EDJ-T1-GE3, from the TrenchFET® series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 24A at 25°C (Tc). The PowerPAK® SC-70-6 package offers efficient thermal performance with a maximum power dissipation of 19W (Tc). With a low on-resistance of 18.5mOhm at 5A and 10V, this MOSFET is suitable for applications requiring high current handling and low conduction losses. It operates across a temperature range of -50°C to 150°C (TJ) and supports gate drive voltages from 2.5V to 10V. Key electrical parameters include a maximum gate charge (Qg) of 66 nC at 10V and input capacitance (Ciss) of 1900 pF at 15V. This component is commonly utilized in power management systems and automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V |
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