SIA450DJ-T1-GE3
MOSFET N-CH 240V 1.52A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIA450DJ-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching. This component features a 240V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 1.52A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 2.9 Ohms at 700mA and 10V gate-source voltage. With a maximum power dissipation of 15W (Tc), it is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 7.04 nC at 10V and an input capacitance (Ciss) of 167 pF at 120V. This MOSFET utilizes a PowerPAK® SC-70-6 surface mount package and operates within a temperature range of -55°C to 150°C (TJ). Its robust design makes it applicable in industries such as industrial power supplies and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.52A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.04 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 167 pF @ 120 V |