SIA450DJ-T1-E3
MOSFET N-CH 240V 1.52A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SIA450DJ-T1-E3, offers a 240 V drain-source breakdown voltage and a continuous drain current of 1.52 A at 25°C (Tc). This device features a low on-resistance of 2.9 O maximum at 700 mA and 10 V gate drive. The SIA450DJ-T1-E3 is housed in a PowerPAK® SC-70-6 surface-mount package, enabling efficient thermal dissipation with maximum power ratings of 3.3 W (Ta) and 15 W (Tc). Key electrical parameters include a gate charge (Qg) of 7.04 nC at 10 V and input capacitance (Ciss) of 167 pF at 120 V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in power management, industrial controls, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.52A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 240 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.04 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 167 pF @ 120 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
