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SIA448DJ-T1-GE3

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SIA448DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIA448DJ-T1-GE3 is a high-performance N-Channel MOSFET from the TrenchFET® series. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). Designed for efficient power switching, it boasts a low on-resistance of 15mOhm maximum at 12.4A and 4.5V Vgs. The SIA448DJ-T1-GE3 utilizes a PowerPAK® SC-70-6 package, suitable for surface mounting applications. Key electrical parameters include a maximum gate charge of 35 nC at 8V Vgs and an input capacitance (Ciss) of 1380 pF maximum at 1V Vds. Power dissipation is rated at 3.5W (Ta) and 19.2W (Tc). This MOSFET is well-suited for applications in power management, automotive systems, and industrial control. It operates across a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SC-70-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 12.4A, 4.5V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackagePowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 1 V

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