SIA448DJ-T1-GE3
MOSFET N-CH 20V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIA448DJ-T1-GE3 is a high-performance N-Channel MOSFET from the TrenchFET® series. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). Designed for efficient power switching, it boasts a low on-resistance of 15mOhm maximum at 12.4A and 4.5V Vgs. The SIA448DJ-T1-GE3 utilizes a PowerPAK® SC-70-6 package, suitable for surface mounting applications. Key electrical parameters include a maximum gate charge of 35 nC at 8V Vgs and an input capacitance (Ciss) of 1380 pF maximum at 1V Vds. Power dissipation is rated at 3.5W (Ta) and 19.2W (Tc). This MOSFET is well-suited for applications in power management, automotive systems, and industrial control. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 12.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19.2W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 1 V |
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