SIA446DJ-T1-GE3
MOSFET N-CH 150V 7.7A PPAK SC70Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix ThunderFET® N-Channel Power MOSFET, part number SIA446DJ-T1-GE3, offers robust performance in a PowerPAK® SC-70-6 package. This device features a 150V drain-to-source voltage (Vdss) and supports a continuous drain current of 7.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 177mOhm at 3A and 10V, it is suitable for applications requiring efficient power switching. The SIA446DJ-T1-GE3 boasts a maximum power dissipation of 3.5W (Ta) and 19W (Tc). Key electrical characteristics include a gate charge (Qg) of 8 nC at 10V and input capacitance (Ciss) of 230 pF at 75V. Designed for surface mounting, this MOSFET operates across a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel. Its specifications make it ideal for use in industrial, automotive, and consumer electronics power management designs.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 177mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 75 V |