SIA444DJT-T4-GE3
MOSFET N-CH 30V 11A/12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIA444DJT-T4-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 30V drain-to-source voltage (Vdss) and offers a continuous drain current of 11A (Ta) or 12A (Tc) at 25°C. With a maximum power dissipation of 3.5W (Ta) or 19W (Tc), it is suitable for applications requiring efficient power handling. The device boasts a low on-resistance (Rds On) of 17mOhm maximum at 7.4A and 10V drive voltage. It is packaged in a surface-mount PowerPAK® SC-70-6 with a Tape & Reel (TR) configuration. Key parameters include a gate charge (Qg) of 15 nC maximum at 10V and input capacitance (Ciss) of 560 pF maximum at 15V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in automotive and industrial power management applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 7.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |
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