SIA444DJT-T1-GE3
MOSFET N-CH 30V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SIA444DJT-T1-GE3, features a 30V drain-source voltage and 12A continuous drain current at 25°C (Tc). This surface mount component is housed in a PowerPAK® SC-70-6 package, offering robust thermal performance with 3.5W (Ta) and 19W (Tc) power dissipation. Key electrical characteristics include a maximum Rds(on) of 17mOhm at 7.4A and 10V, and a gate charge of 15 nC at 10V. Input capacitance (Ciss) is a maximum of 560 pF at 15V. The device operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power management and computing.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 7.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |
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