SIA443DJ-T1-E3
MOSFET P-CH 20V 9A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel Power MOSFET, part number SIA443DJ-T1-E3, features a 20V drain-source voltage and a continuous drain current of 9A at 25°C (Tc). This device offers a low on-resistance of 45mOhm maximum at 4.7A and 4.5V Vgs. Engineered for efficient power management, it supports a gate-source drive voltage range from 1.8V to 4.5V. The SIA443DJ-T1-E3 is housed in a compact PowerPAK® SC-70-6 surface-mount package, facilitating high-density designs. With a maximum power dissipation of 3.3W (Ta) and 15W (Tc), it is suitable for applications in consumer electronics, automotive systems, and industrial power control. The MOSFET operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 10 V |
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