SIA430DJ-T4-GE3
MOSFET N-CH 20V 12A/12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SIA430DJ-T4-GE3, offers a 20V drain-to-source voltage rating and a continuous drain current of 12A at 25°C ambient and 12A at 25°C case. This surface mount device, packaged in a PowerPAK® SC-70-6, features a maximum on-resistance of 13.5mOhm at 7A and 10V gate-source voltage. The SIA430DJ-T4-GE3 supports drive voltages from 4.5V to 10V, with a maximum gate charge of 18nC at 10V and input capacitance of 800pF at 10V. Power dissipation is rated at 3.5W (Ta) and 19.2W (Tc). Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19.2W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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