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SIA430DJ-T1-GE3

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SIA430DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIA430DJ-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 13.5mOhm maximum at 7A and 10V Vgs. With a gate charge (Qg) of 18nC maximum at 10V and an input capacitance (Ciss) of 800pF maximum at 10V, it is optimized for fast switching performance. The SIA430DJ-T1-GE3 supports a wide gate drive voltage range from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Its thermal performance includes a maximum power dissipation of 3.5W (Ta) and 19.2W (Tc). Packaged in the PowerPAK® SC-70-6 for surface mounting, this MOSFET is suitable for use in power management, automotive, and industrial systems. It operates within an ambient temperature range of -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SC-70-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs13.5mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V

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