SIA430DJ-T1-GE3
MOSFET N-CH 20V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIA430DJ-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 13.5mOhm maximum at 7A and 10V Vgs. With a gate charge (Qg) of 18nC maximum at 10V and an input capacitance (Ciss) of 800pF maximum at 10V, it is optimized for fast switching performance. The SIA430DJ-T1-GE3 supports a wide gate drive voltage range from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Its thermal performance includes a maximum power dissipation of 3.5W (Ta) and 19.2W (Tc). Packaged in the PowerPAK® SC-70-6 for surface mounting, this MOSFET is suitable for use in power management, automotive, and industrial systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19.2W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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