SIA426DJ-T1-GE3
MOSFET N-CH 20V 4.5A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIA426DJ-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for efficient power management. This component offers a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C (Tc). With a low on-resistance (Rds On) of 23.6mOhm at 9.9A and 10V, it minimizes conduction losses. The SIA426DJ-T1-GE3 features a gate charge (Qg) of 27 nC at 10V and input capacitance (Ciss) of 1020 pF at 10V, facilitating fast switching performance. It supports a gate-source voltage (Vgs) range of ±12V and a threshold voltage (Vgs(th)) of 1.5V at 250µA. The device is housed in a PowerPAK® SC-70-6 package, suitable for surface mounting, and operates across a wide temperature range of -55°C to 150°C. Power dissipation is rated at 3.5W (Ta) and 19W (Tc). This MOSFET is utilized in applications such as power supplies and battery management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 23.6mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
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