SIA425EDJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, Part Number SIA425EDJ-T1-GE3, offers a 20V drain-source voltage and 4.5A continuous drain current at 25°C. This device features a low on-resistance of 60mOhm maximum at 4.2A and 4.5V Vgs, with a threshold voltage of 1V at 250µA. The SIA425EDJ-T1-GE3 is packaged in a PowerPAK® SC-70-6 for surface mounting, designed for efficient thermal management with a power dissipation of 15.6W at 25°C (Tc). Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power management, battery charging, and consumer electronics. Drive voltages range from 1.8V to 4.5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 15.6W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
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