SIA418DJ-T1-GE3
MOSFET N-CH 30V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SIA418DJ-T1-GE3, offers robust performance with a 30V drain-source voltage and continuous drain current capability of 12A (Tc). This device features a low on-resistance of 18mOhm at 9A, 10V, optimized by its 4.5V gate drive capability and TrenchFET® technology. The SIA418DJ-T1-GE3 is housed in a compact PowerPAK® SC-70-6 package, suitable for surface mount applications, and supports a wide operating temperature range of -55°C to 150°C. Key electrical parameters include a maximum gate charge of 17 nC and an input capacitance of 570 pF. With a maximum power dissipation of 19W (Tc), this MOSFET is well-suited for power management applications in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 15 V |
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