SIA417DJ-T1-GE3
MOSFET P-CH 8V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SIA417DJ-T1-GE3, offers an 8V drain-source breakdown voltage and a continuous drain current of 12A at 25°C (Tc). This device features a low Rds(on) of 23mOhm at 7A and 4.5V Vgs, with a gate charge of 32nC at 5V. The SIA417DJ-T1-GE3 is housed in a compact PowerPAK® SC-70-6 surface-mount package, enabling high power density with a maximum dissipation of 19W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in battery management, portable electronics, and power switching circuits where efficient P-channel control is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 4 V |