SIA416DJ-T1-GE3
MOSFET N-CH 100V 11.3A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIA416DJ-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 11.3A at 25°C (Tc). The low on-resistance, specified as a maximum of 83mOhm at 3.2A and 10V Vgs, is achieved with a 4.5V to 10V gate drive. Key characteristics include a maximum gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 295 pF at 50V. The SIA416DJ-T1-GE3 is housed in a PowerPAK® SC-70-6 surface mount package, offering excellent thermal performance with a power dissipation of 19W (Tc) and 3.5W (Ta). This MOSFET is suitable for use in automotive, industrial, and computing power management systems. The operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 83mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 50 V |
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