SIA415DJ-T1-GE3
MOSFET P-CH 20V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, SIA415DJ-T1-GE3, from the TrenchFET® series. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The PowerPAK® SC-70-6 package offers a compact footprint for surface mounting. Key electrical parameters include a maximum Rds(On) of 35mOhm at 5.6A and 4.5V gate-source voltage. It supports a gate-source voltage range of ±12V, with a threshold voltage (Vgs(th)) of 1.5V at 250µA. The device exhibits a maximum input capacitance (Ciss) of 1250pF at 10V and a gate charge (Qg) of 47nC at 10V. Power dissipation is rated at 3.5W (Ta) and 19W (Tc). This component is utilized in applications such as automotive power management and industrial control systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 10 V |