SIA414DJ-T1-GE3
MOSFET N-CH 8V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIA414DJ-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power management applications. This component features an 8V drain-to-source voltage (Vdss) and a continuous drain current of 12A (Tc) at 25°C. The SIA414DJ-T1-GE3 offers a low on-resistance of 11mOhm maximum at 9.7A and 4.5V gate drive, with a gate charge (Qg) of 32 nC maximum. It supports drive voltages ranging from 1.2V to 4.5V and has a maximum gate-source voltage (Vgs) of ±5V. The device is housed in a PowerPAK® SC-70-6 surface mount package, enabling compact designs. With a maximum power dissipation of 3.5W (Ta) or 19W (Tc), it is suitable for use in consumer electronics and industrial power control systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 9.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 4 V |
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