SIA411DJ-T1-E3
MOSFET P-CH 20V 12A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SIA411DJ-T1-E3, offers a 20V drain-source voltage and a continuous drain current of 12A at 25°C (Tc). This device features a low Rds(on) of 30mOhm maximum at 5.9A and 4.5V Vgs, with a gate drive range from 1.5V to 4.5V. The SIA411DJ-T1-E3 utilizes advanced TrenchFET® technology for efficient power management. It is housed in a PowerPAK® SC-70-6 surface mount package, designed for thermal performance with a maximum power dissipation of 19W (Tc). Typical applications include power management, battery charging, and load switching in consumer electronics and industrial systems. Gate charge is rated at 38 nC maximum at 8V Vgs, with input capacitance (Ciss) at 1200 pF maximum. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
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