SIA406DJ-T1-GE3
MOSFET N-CH 12V 4.5A PPAK SC70-6Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIA406DJ-T1-GE3 is an N-Channel TrenchFET® MOSFET. This device features a 12V drain-source voltage rating and a continuous drain current capability of 4.5A at 25°C (Tc). The Rds(On) is specified at a maximum of 19.8mOhm at 10.8A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 23 nC (max) at 5V and input capacitance (Ciss) of 1380 pF (max) at 6V. Power dissipation capabilities are 3.5W (Ta) and 19W (Tc). The SIA406DJ-T1-GE3 is housed in a PowerPAK® SC-70-6 surface mount package and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.8mOhm @ 10.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 6 V |
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