SI9435BDY-T1-GE3
MOSFET P-CH 30V 4.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI9435BDY-T1-GE3, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 4.1A at 25°C ambient. This device features a low on-resistance of 42mOhm maximum at 5.7A and 10V gate drive. With a maximum power dissipation of 1.3W at 25°C ambient, it is housed in an 8-SOIC surface mount package. The gate charge is specified at 24nC maximum at 10V, and the gate-source voltage limits are ±20V. The threshold voltage is 3V maximum at 250µA. This component is suitable for power management applications across various industries, including consumer electronics and industrial automation. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
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