SI9435BDY-T1-E3
MOSFET P-CH 30V 4.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI9435BDY-T1-E3 is a P-Channel Power MOSFET designed for efficient power management. This device features a 30V drain-source voltage rating and a continuous drain current capability of 4.1A at 25°C ambient temperature. With a low on-resistance of 42mOhm maximum at 5.7A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET is housed in an 8-SOIC package for surface mounting, offering a total power dissipation of 1.3W. Key parameters include a gate charge of 24nC maximum at 10V and a threshold voltage of 3V maximum at 250µA. Its operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
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