SI9434BDY-T1-GE3
MOSFET P-CH 20V 4.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI9434BDY-T1-GE3 is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 4.5A at 25°C ambient. The low on-resistance (Rds On) of 40mOhm at 6.3A and 4.5V gate-source voltage ensures minimal power loss during conduction.
The SI9434BDY-T1-GE3 is housed in an 8-SOIC package, suitable for surface mounting, and offers a power dissipation of 1.3W (Ta). It operates across a wide temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 18 nC at 4.5V and a gate threshold voltage (Vgs(th)) of 1.5V at 250µA. Drive voltages range from 2.5V to 4.5V for optimal Rds On performance. This MOSFET is commonly utilized in power management, battery charging, and load switching circuits across various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |