SI9434BDY-T1-E3
MOSFET P-CH 20V 4.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI9434BDY-T1-E3 is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 4.5A at 25°C. The Rds On is specified at a maximum of 40mOhm when driven at 6.3A and 4.5V Vgs. It supports gate drive voltages from 2.5V to 4.5V, with a maximum gate-source voltage (Vgs) of ±8V. The device's gate charge (Qg) is a maximum of 18nC at 4.5V Vgs. With a maximum power dissipation (Ta) of 1.3W, it is suitable for operation across a wide temperature range from -55°C to 150°C. The SI9434BDY-T1-E3 is provided in an 8-SOIC package and is supplied on tape and reel. This MOSFET is commonly utilized in high-volume applications within the consumer electronics and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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