SI9433BDY-T1-GE3
MOSFET P-CH 20V 4.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI9433BDY-T1-GE3 is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.5A at 25°C, with a maximum power dissipation of 1.3W. The Rds On is rated at a maximum of 40mOhm at 6.2A and 4.5V gate drive, with typical drive voltages ranging from 2.7V to 4.5V. The device utilizes MOSFET technology and is housed in an 8-SOIC package, suitable for surface mounting. Operating temperature range is -55°C to 150°C. This Vishay Siliconix MOSFET is commonly employed in power management, battery charging, and general switching applications within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
