SI9433BDY-T1-E3
MOSFET P-CH 20V 4.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI9433BDY-T1-E3 is a P-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 4.5A at 25°C. The Rds On is characterized at a maximum of 40mOhm at 6.2A and 4.5V Vgs. With a gate charge of 14 nC at 4.5V Vgs, it offers optimized switching performance. The component is housed in an 8-SOIC package suitable for surface mounting and supports a maximum power dissipation of 1.3W at 25°C. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power management, battery charging, and motor control circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
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