SI9424BDY-T1-E3
MOSFET P-CH 20V 5.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI9424BDY-T1-E3, features a 20V drain-to-source voltage and a continuous drain current of 5.6A at 25°C. This device utilizes advanced TrenchFET technology for low on-resistance, specified at a maximum of 25mOhm at 7.1A and 4.5V Vgs. The P-Channel MOSFET is housed in an 8-SOIC package suitable for surface mounting. Key parameters include a gate charge of 40 nC at 4.5V Vgs and a maximum power dissipation of 1.25W. The device operates across a temperature range of -55°C to 150°C. This component is commonly employed in power management applications within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±9V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
