SI9410BDY-T1-GE3
MOSFET N-CH 30V 6.2A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® MOSFET, part number SI9410BDY-T1-GE3, is a 30V N-Channel power MOSFET designed for demanding applications. This device features a maximum continuous drain current of 6.2A (Ta) and a low on-resistance of 24mOhm at 8.1A and 10V Vgs. The 8-SOIC package offers a compact footprint for surface mounting, with power dissipation rated at 1.5W (Ta). Key electrical characteristics include a gate charge of 23 nC @ 10V and a threshold voltage of 3V @ 250µA. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in various industrial and automotive power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |