SI9410BDY-T1-E3
MOSFET N-CH 30V 6.2A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI9410BDY-T1-E3 is an N-Channel TrenchFET® Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 6.2A at 25°C, with a maximum power dissipation of 1.5W. The device exhibits low on-resistance (Rds On) of 24mOhm at 8.1A and 10V Vgs, optimized for minimal conduction losses. It operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. The SI9410BDY-T1-E3 is housed in an 8-SOIC package, suitable for surface mounting and available on tape and reel for automated assembly. Its robust performance characteristics make it suitable for use in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
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