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SI9410BDY-T1-E3

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SI9410BDY-T1-E3

MOSFET N-CH 30V 6.2A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI9410BDY-T1-E3 is an N-Channel TrenchFET® Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 6.2A at 25°C, with a maximum power dissipation of 1.5W. The device exhibits low on-resistance (Rds On) of 24mOhm at 8.1A and 10V Vgs, optimized for minimal conduction losses. It operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. The SI9410BDY-T1-E3 is housed in an 8-SOIC package, suitable for surface mounting and available on tape and reel for automated assembly. Its robust performance characteristics make it suitable for use in industrial, automotive, and consumer electronics sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 8.1A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V

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