SI8851EDB-T2-E1
MOSFET P-CH 20V PWR MICRO FOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 20 V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot® (2.4x2)
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 30-XFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Power Micro Foot® (2.4x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 10 V |