SI8809EDB-T2-E1
MOSFET P-CH 20V 1.9A MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8809EDB-T2-E1 is a P-Channel TrenchFET® series MOSFET with a Drain-to-Source Voltage (Vdss) of 20V. This device features a low on-resistance of 90mOhm maximum at 1.5A and 4.5V Vgs, with a continuous drain current (Id) of 1.94A at 25°C. The gate charge (Qg) is a maximum of 15 nC at 8V. Designed for surface mount applications, it is housed in a compact 4-Microfoot package. The maximum power dissipation is 500mW. The device operates over a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±8V. This MOSFET is suitable for various applications including power management, battery charging, and power switching in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.94 (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
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