SI8805EDB-T2-E1
MOSFET P-CH 8V 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8805EDB-T2-E1 is a P-Channel TrenchFET® power MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 2.2A at 25°C ambient. The low On-Resistance (Rds On) of 68mOhm at 1.5A and 4.5V Vgs, combined with a maximum power dissipation of 500mW (Ta), makes it suitable for demanding thermal environments. It operates with a gate drive voltage range of 1.2V to 4.5V and has a maximum gate-source voltage of ±5V. The device is presented in a compact 4-Microfoot (4-XFBGA, CSPBGA) package, suitable for surface mounting, and is supplied on tape and reel. Its performance characteristics are well-suited for use in portable electronics, battery management systems, and power supply circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
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