SI8475EDB-T1-E1
MOSFET P-CH 20V 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI8475EDB-T1-E1, offers a 20V drain-to-source voltage with a continuous drain current of 4.9A at 25°C (Ta). This surface mount device in a 4-Microfoot package features a maximum Rds(On) of 32mOhm at 1A and 4.5V Vgs. The device is designed for efficient power management with a maximum power dissipation of 1.1W (Ta) and 2.7W (Tc). It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±12V, with a threshold voltage of 1.5V at 250µA. This component finds application in various power electronics, including battery management, load switching, and power distribution in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
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