SI8473EDB-T1-E1
MOSFET P-CH 20V 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI8473EDB-T1-E1, offers a 20V drain-source voltage rating and a continuous drain current of 4.5A at 25°C ambient. This surface-mount device features a low Rds(on) of 41mOhm maximum at 1A and 4.5V Vgs. The device supports gate-source drive voltages up to ±12V, with a threshold voltage of 1.5V at 250µA. Power dissipation is rated at 1.1W ambient and 2.7W case temperature. Packaged in a 4-Microfoot (4-XFBGA, CSPBGA) footprint and supplied on tape and reel, this MOSFET is suitable for applications in power management, battery charging, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
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