SI8469DB-T2-E1
MOSFET P-CH 8V 4.6A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8469DB-T2-E1 is a P-Channel TrenchFET® MOSFET designed for high-density power management. This device features a Drain-to-Source Voltage (Vdss) of 8V and a continuous drain current (Id) of 4.6A at 25°C ambient temperature, with a maximum power dissipation of 780mW (Ta) or 1.8W (Tc). The Rds On is specified at a maximum of 64mOhm at 1.5A and 4.5V gate drive. Key parameters include a gate charge (Qg) of 17nC at 4.5V and input capacitance (Ciss) of 900pF at 4V. Operating across a temperature range of -55°C to 150°C, it is supplied in a 4-UFBGA package, also known as 4-Microfoot, on tape and reel. This component is utilized in applications such as mobile devices, portable electronics, and power management circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 4 V |
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