SI8467DB-T2-E1
MOSFET P-CH 20V 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8467DB-T2-E1 is a P-Channel TrenchFET® power MOSFET designed for demanding applications requiring efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.5A at 25°C (Ta), with a maximum power dissipation of 780mW (Ta) or 1.8W (Tc). The device exhibits a low on-resistance (Rds On) of 73mOhm at 1A, 4.5V, and utilizes a 4-Microfoot (4-XFBGA, CSPBGA) surface mount package for high-density board designs. Drive voltage capabilities range from 2.5V to 4.5V. The SI8467DB-T2-E1 is suitable for use in power management, automotive, and industrial automation sectors. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 10 V |
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