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SI8451DB-T2-E1

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SI8451DB-T2-E1

MOSFET P-CH 20V 10.8A 6MICROFOOT

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI8451DB-T2-E1, offers a 20V drain-source breakdown voltage and a continuous drain current of 10.8A at 25°C (Tc). This surface mount device features a low Rds(on) of 80mOhm maximum at 1A, 4.5V Vgs, and a gate charge of 24nC maximum at 8V Vgs. The component's input capacitance (Ciss) is rated at 750pF maximum at 10V Vds. Designed for efficient power management, it has a maximum power dissipation of 2.77W (Ta) and 13W (Tc). The SI8451DB-T2-E1 is supplied in a 6-Micro Foot™ (1.5x1) package, commonly found in applications such as power supplies and battery management systems. Operating temperature ranges from -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10.8A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-Micro Foot™ (1.5x1)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 10 V

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