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SI8447DB-T2-E1

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SI8447DB-T2-E1

MOSFET P-CH 20V 11A 6MICRO FOOT

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI8447DB-T2-E1, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Tc). This device features a low on-resistance of 75mOhm maximum at 1A, 4.5V Vgs, and a gate charge of 25nC maximum at 10V Vgs. With a maximum power dissipation of 13W at 25°C (Tc) and 2.77W at 25°C (Ta), it is suitable for demanding applications. The device is housed in a compact 6-Micro Foot™ (1.5x1) package, specifically a 6-UFBGA, designed for surface mounting. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in industries such as automotive and industrial power management. Its input capacitance (Ciss) is 600pF maximum at 10V Vds, and it supports a gate-source voltage range of ±12V. The threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs75mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device Package6-Micro Foot™ (1.5x1)
Drive Voltage (Max Rds On, Min Rds On)1.7V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 10 V

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