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SI8445DB-T2-E1

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SI8445DB-T2-E1

MOSFET P-CH 20V 9.8A 4MICROFOOT

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SI8445DB-T2-E1 is a P-Channel TrenchFET® Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 9.8 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 84 mOhm at 1 A and 4.5 V, it offers efficient power switching. The device supports gate drive voltages from 1.2 V to 4.5 V, with a maximum Vgs of ±5 V. Key characteristics include a maximum Gate Charge (Qg) of 16 nC at 5 V and a maximum Input Capacitance (Ciss) of 700 pF at 10 V. The SI8445DB-T2-E1 is housed in a compact 4-Microfoot (4-XFBGA, CSPBGA) package, suitable for surface mount integration. It operates within an expanded temperature range of -55°C to 150°C (TJ) and offers a maximum power dissipation of 1.8 W (Ta) or 11.4 W (Tc). This MOSFET is utilized in various industries including consumer electronics and industrial automation.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFBGA, CSPBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9.8A (Tc)
Rds On (Max) @ Id, Vgs84mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 11.4W (Tc)
Vgs(th) (Max) @ Id850mV @ 250µA
Supplier Device Package4-Microfoot
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Vgs (Max)±5V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 10 V

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