SI8439DB-T1-E1
MOSFET P-CH 8V 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI8439DB-T1-E1, is designed for demanding applications. This device features a 8V drain-source breakdown voltage (Vdss) and offers a continuous drain current of 5.9A (Ta) with a maximum power dissipation of 1.1W (Ta). The low on-resistance of 25mOhm at 1.5A and 4.5V (Vgs) minimizes conduction losses. It operates with a gate-source voltage range up to ±5V, and a threshold voltage of 800mV is specified at 250µA. Gate charge is a maximum of 50nC at 4.5V. The SI8439DB-T1-E1 is housed in a compact 4-UFBGA (4-Microfoot) package suitable for surface mounting. This component finds utility in power management solutions across various industries, including consumer electronics and industrial automation. It is supplied in tape and reel packaging for efficient assembly processes.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
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