SI8435DB-T1-E1
MOSFET P-CH 20V 10A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI8435DB-T1-E1 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 10A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 41mOhm at 1A and 4.5V gate-source voltage. Key characteristics include a gate charge (Qg) of 35 nC (Max) at 5V and an input capacitance (Ciss) of 1600 pF (Max) at 10V. With a maximum power dissipation of 6.25W at 25°C (Tc), the SI8435DB-T1-E1 is suitable for demanding applications. The operating temperature range is -55°C to 150°C (TJ). This component utilizes a 4-Microfoot package (4-XFBGA, CSPBGA) and is supplied in Tape & Reel (TR) packaging. Its robust design makes it valuable in automotive, industrial, and consumer electronics sectors requiring high-efficiency power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.78W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
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