SI8429DB-T1-E1
MOSFET P-CH 8V 11.7A 4MICROFOOTManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI8429DB-T1-E1 is a P-Channel MOSFET from the TrenchFET® series. This component features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 11.7A at 25°C (Tc). The Rds On is a maximum of 35mOhm at 1A and 4.5V, with drive voltages ranging from 1.2V to 4.5V. Key parameters include a Gate Charge (Qg) of 26 nC at 5V and an Input Capacitance (Ciss) of 1640 pF at 4V. Power dissipation is rated at 2.77W (Ta) and 6.25W (Tc). This device is constructed using Metal Oxide MOSFET technology and is mounted via surface mount, supplied in a 4-XFBGA, CSPBGA package, specifically referred to as 4-Microfoot. It operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power management and portable electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.77W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 4-Microfoot |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 4 V |
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